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Статья
2020

Features of Radiation Changes in Electrical Properties of InAlN/GaN Hemts


A. G. AfoninA. G. Afonin, V. N. BrudnyiV. N. Brudnyi, P. A. BrudnyiP. A. Brudnyi, L. E. VelikovskiiL. E. Velikovskii
Российский физический журнал
https://doi.org/10.1007/s11182-020-01888-w
Abstract / Full Text

The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN HEMT structures is analyzed. The features of initial electronic properties of the InAlN and AlGaN barrier layers with a change in their composition, as well as the change in these properties when exposed to high-energy radiation are considered with taking into account the compositional dependence of the charge neutrality level energy position in the energy spectrum of these barrier layers.

Author information
  • National Research Tomsk State University, Tomsk, RussiaA. G. Afonin, V. N. Brudnyi, P. A. Brudnyi & L. E. Velikovskii
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