Статья
2020
Plasma Etching in InAlN/GaN Hemt Technology
I. A. Filippov, V. A. Shakhnov, L. E. Velikovskii, P. A. Brudnyi, O. I. Demchenko
Российский физический журнал
https://doi.org/10.1007/s11182-020-02006-6
Abstract / Full Text
The experimental data on the plasma etching of Si3N4 for sub-100 nm gate fabrication for high electron mobility transistors (HEMTs) based on InAlN/GaN heterostructures are analyzed. The influence of the plasma etching process parameters on the plasma-induced damage to the InAlN/GaN heterostructure is considered. The possibility of formation of a 70 nm-length gate InAlN/GaN HEMT using low damage reactive ion etching of Si3N4 is demonstrated.
Author information
- Bauman Moscow State Technical University, Moscow, RussiaI. A. Filippov & V. A. Shakhnov
- National Research Tomsk State University, Tomsk, RussiaL. E. Velikovskii & P. A. Brudnyi
- National Research Tomsk Polytechnic University, Tomsk, RussiaO. I. Demchenko
References
- G. H. Jessen, et al., IEEE Trans. Electron Devices, 54, No. 10, 2589–2597 (2007).
- J. Kuzmik, A. Kostopoulos, G. Konstantinidis, et al., IEEE Trans. Electron Dev., 53, No. 3, 422–426 (2006).
- P. Saunier, et al., IEEE Trans. Ellectron Dev., 60, No. 10, 3099–3104 (2013).
- J. J. Freedsman, A. Watanabe, T. Ito, et al., Appl. Phys. Express., 7, No. 10, 104101 (2014).
- F. Medjdoub, J. F. Carlin, C. Gaquière, et al., Open Elect. Electron. Eng. J., 2, No. 1, 1–7 (2008).
- Press release, Fujitsu Laboratories Ltd., (2017) https://www.fujitsu.com/global/about/resources/news/pressreleases/2017/0724-01.htm.l
- T. Ohki, et al., IEEE Electron Device Lett., 40, No. 2, 287–290 (2019).
- C. Ostermaier, et al., Jpn. J. Appl. Phys., 49, No. 11, 116506 (2010).
- S. U. Engelmann, et al., J. Vac. Sci. Technol. B, 35, No. 5, 051803 (2017).
- N. Marchack, et al., J. Vac. Sci. Technol. B, 36, No. 3, 031801 (2018).
- H. Miyazoe, et al., J. Vac. Sci. Technol. B, 36, No. 3, 032201 (2018).
- C. J. M. Smith, et al., J. Vac. Sci. Technol. B, 17, No. 1, 113 (1999).
- Positive E-Beam Resists AR-P 6200 (CSAR 62), Electronic resource, URL:https://ostec-materials.ru/upload/iblock/Allresist%20AR-P%206200%20series_TDS_Eng.pdf.
- F. Medjdoub, Gallium Nitride (GaN): Physics, Devices, and Technology, 1st ed., CRC Press (2015).