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Статья
2020

Plasma Etching in InAlN/GaN Hemt Technology


I. A. FilippovI. A. Filippov, V. A. ShakhnovV. A. Shakhnov, L. E. VelikovskiiL. E. Velikovskii, P. A. BrudnyiP. A. Brudnyi, O. I. DemchenkoO. I. Demchenko
Российский физический журнал
https://doi.org/10.1007/s11182-020-02006-6
Abstract / Full Text

The experimental data on the plasma etching of Si3N4 for sub-100 nm gate fabrication for high electron mobility transistors (HEMTs) based on InAlN/GaN heterostructures are analyzed. The influence of the plasma etching process parameters on the plasma-induced damage to the InAlN/GaN heterostructure is considered. The possibility of formation of a 70 nm-length gate InAlN/GaN HEMT using low damage reactive ion etching of Si3N4 is demonstrated.

Author information
  • Bauman Moscow State Technical University, Moscow, RussiaI. A. Filippov & V. A. Shakhnov
  • National Research Tomsk State University, Tomsk, RussiaL. E. Velikovskii & P. A. Brudnyi
  • National Research Tomsk Polytechnic University, Tomsk, RussiaO. I. Demchenko
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