Статья
2019
Peculiarities of Kinetic Coefficients of Single Crystals of a Layered р-GaSe Semiconductor
A. Sh. Abdinov, R. F. Babaeva
Российский физический журнал
https://doi.org/10.1007/s11182-018-1585-1
Abstract / Full Text
The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical conductivity, and charge carrier mobility on the temperature, electric field strength, and doping with rare-earth elements are investigated in single crystals of p-type gallium selenide. It has been established that in the low-temperature region, these dependences have a peculiarity caused by the presence of random macroscopic defects in the samples under study. At a small level of doping of p-GaSe single crystals with Gd and Er, a non-monotonic dependence of the mobility and electrical conductivity on the content of the introduced impurity is observed.
Author information
- Baku State University, Baku, AzerbaijanA. Sh. Abdinov
- Azerbaijan State University of Economics, Baku, AzerbaijanR. F. Babaeva
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