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Статья
2019

Peculiarities of Kinetic Coefficients of Single Crystals of a Layered р-GaSe Semiconductor


A. Sh. AbdinovA. Sh. Abdinov, R. F. BabaevaR. F. Babaeva
Российский физический журнал
https://doi.org/10.1007/s11182-018-1585-1
Abstract / Full Text

The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical conductivity, and charge carrier mobility on the temperature, electric field strength, and doping with rare-earth elements are investigated in single crystals of p-type gallium selenide. It has been established that in the low-temperature region, these dependences have a peculiarity caused by the presence of random macroscopic defects in the samples under study. At a small level of doping of p-GaSe single crystals with Gd and Er, a non-monotonic dependence of the mobility and electrical conductivity on the content of the introduced impurity is observed.

Author information
  • Baku State University, Baku, AzerbaijanA. Sh. Abdinov
  • Azerbaijan State University of Economics, Baku, AzerbaijanR. F. Babaeva
References
  1. G. Fisher, Helv. Phys. Acta., 36, (1963) 317–333.
  2. M. K. Anis and A. R. Piercy, J. Phys. D: Appl. Phys., 17, No. 6, 1229–1232 (1984).
  3. F. I. Ismailov, F. A. Akhundov, and O. R. Vernich, Phys. Stat. Sol. B, 17, Iss. 23, k237–k240 (1966).
  4. V. Augelli, C. Manfredotti, R. Murri, and L. Vasanelli, Phys. Rev. B, 17, Iss. 8, 3221–3226 (1978).
  5. C. Manfredotti, A. Rizzo, C. De Blasi, et al., J. Appl. Phys., 46, Iss. 10, 4531– 4536 (1975).
  6. C. Manfredotti, A. M. Mancini, R. Murr, et al., Il Nuovo Cimento B, 39, Iss. 1, 257–268 (1977).
  7. Yu-Kuei Hsu, Chen-Shiung Chang, and Wen-Chang Huang, J. Appl. Phys., 96, Iss. 3, 1563–1567 (2004).
  8. A. Sh. Abdinov, R. F. Babaeva, R. M. Rzaev, and S. I. Amirova, Neorg. Mater., 48, No. 6, 649–653 (2012).
  9. A. Sh. Abdinov, R. F. Babaeva, N. A. Ragimova, et al., Neorg. Mater., 50, No. 4, 362–367 (2014).
  10. M. Lampert and P. Mark, Injection Currents in Solids [Russian translation], Mir, Moscow (1973).
  11. A. Sh. Abdinov, A. G. Kyazymzadeh, and A. A. Akhmedov, Fiz. Tekh. Poluprovodn., 10, No. 13, 2299– 2303 (1976).
  12. A. Sh. Abdinov and A. G. Kyazymzade, Fiz. Tekh. Poluprovodn., 9, No. 11, 2135– 2138 (1975).
  13. A. Kokh, V. V. Atuchin, T. A. Gavrilova, et al., J. Microscopy, 256, Iss. 3, 208–212 (2014).
  14. N. Khennei, Solid state chemistry Solids [Russian translation], Mir, Moscow (1971).
  15. Ya. A. Ugai, General Inorganic Chemistry [in Russian], Vyssh. Shkola, Moscow (1997).
  16. Properties of Elements, Reference Book, Ed. M. E. Drits [in Russian], Metallurgiya, Moscow (1985).
  17. Jellinek Von Franz and Harry Hahn, Z. Naturforsch. B, 16b, 713–715 (1961).
  18. A. Kuhn, A. Chevy, and R. Chevalier, Рhys. Stat. Sol. (a), 31, Iss. 2, 469–475 (1975).
  19. G. A. Akhundov, A. Sh. Abdinov, N. M. Mekhtiev, and A. G. Kyazymzade, Fiz. Tekh. Poluprovodn., 7, 1830–1833 (1973).
  20. B. M. Аskerov. Electron Transport Phenomena in Semiconductors, World Scientific, Singapore, New Jersey, London (1994).
  21. L. E. Vorob’yev, S. N. Danilov, E. L. Ivchenko, et al., Kinetic and Optical Phenomena in Strong Electric Fields [in Russian], Nauka, St. Petersburg (2000).
  22. E. D. Golovkina, N. N. Levchenya, and A. Ya. Shik, Fiz. Tekh. Poluprovodn., 10, Vyp. 2, 383–386 (1976).
  23. A. Sh. Abdinov and R. F. Babaeva, Prikladn. Fiz., No. 5, 74–78 (2004).
  24. Yu-Kuei Hsu, Chen-Shiung Chang, and Wen-Feng Hsieh, Jpn. J. Appl. Phys., Part 1, No. 7A, 4222–4225 (2003).
  25. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1979).