Sustained Photovoltaic Effect from Nitrogen Rich Carbon Nitride (CNx) Prepared by Reactive Magnetron Sputtering

 Joshua C. Byers Joshua C. Byers , Claude Deslouis Claude Deslouis , Alain Pailleret Alain Pailleret , O. A. Semenikhin O. A. Semenikhin
Российский электрохимический журнал
Abstract / Full Text

Nitrogen rich carbon nitride (CNx) materials were prepared using reactive magnetron sputtering from a pure nitrogen plasma at elevated deposition pressures and low deposition powers. Solid-state photovoltaic devices utilizing such materials were prepared and characterized. As-prepared CNx materials showed photoconductive behaviour and no photovoltaic effect. This was attributed to the p-doping effect of oxygen present in as-prepared CNx films resulting in formation of a compensated semiconductor. However, upon thermal annealing, CNx materials showed a pronounced photovoltaic effect consistent with the n-type semiconductor behaviour. This result demonstrates that nitrogen rich carbon nitride is a promising photovoltaic material for all-carbon photovoltaic solar cells.

Author information
  • Department of Chemistry, The University of Western Ontario, N6A 5B7, London, Ontario, Canada

    Joshua C. Byers & O. A. Semenikhin

  • Département de chimie, Université du Québec à Montréal, Case postale 8888, succursale Centre-ville, H3C 3P8, Montréal, Québec, Canada

    Joshua C. Byers

  • Sorbonne Université, CNRS, Laboratoire Interfaces et Systèmes Electrochimiques (LISE, UMR 8235), 4 place Jussieu, (case courrier 133), F-75005, Paris, France

    Claude Deslouis & Alain Pailleret

  • Department of Chemistry, M.V. Lomonosov Moscow State University, 119991, Moscow, Russia

    O. A. Semenikhin

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