Статья
2016
Abstract / Full Text

Iron selenide (Fe x Se y ) thin films were electrodeposited on a glassy carbon electrode (GCE) surface under constant potential and pulse potential modes. The deposition mechanism was investigated using cyclic voltammetry. Electrochemical processes at room temperature are accompanied by adsorption of selenium on the electrode surface and complicated by chemical reactions in the solution bulk. Several approaches to control the film stoichiometry were applied: varying of electrodeposition potential; the use of elevated temperatures (60–80°C) to decrease the electrode passivation and electrodissolution of interfering elements under pulse mode. The composition of Fe x Se y thin films was analyzed using an energy dispersive X-rays (EDX) analysis.

Author information
  • Department of Chemistry, Lomonosov Moscow State University, Moscow, 119991, Russia

    V. K. Laurinavichyute, S. E. Bakhtenkova, O. A. Drozhzhin, S. M. Kazakov & E. V. Antipov

References
  1. Demura, S., Okazaki, H., Ozaki, T., Hara, H., Kawasaki, Y., Deguchi, K., Watanabe, T., Denholme, S.J., Mizuguchi, Y., Yamaguchi, T., Takeya, H., and Takano, Y., Solid State Commun., 2013, vol. 154, p. 40.
  2. Thanikaikarasan, S., Mahalingam, T., Sundarama, K., Kathalingam, A., Kim, Y.D., and Kim, T., Vacuum, 2009, vol. 83, p. 1066.
  3. Thanikaikarasan, S., Mahalingam, T., Raja, M., Kim, T., and Kim, Y.D., J. Mater. Sci: Mater. Electron., 2009, vol. 20, p. 727.
  4. Chen, P.Y., Hu, S.F., Liu, R.S., and Huang, C.Y., Thin Solid Films, 2011, vol. 519, p. 8397.
  5. Seby, F., Potin-Gautier, M., Giffaut, E., Borge, G., and Donard, O.F.X., Chem. Geol., 2001, vol. 171, p. 173.
  6. Pourbaix, M., Atlas d’Equilibres Electrochimique, Paris, 1963.
  7. Lai, Y., Han, C., Yan, C., Liu, F., Li, J., and Liu, Y., J. Alloy. Compd., 2013, vol. 557, p. 40.
  8. Lai, Y., Liu, F., Li, J., Zhang, Z., and Liu, Y., J. Electroanal. Chem., 2010, vol. 639, p. 187.
  9. Steponavičius, A., Šimkūnaitė, D., Valsiūnas, I., and Baltrūnas, G., Chemija, 2011, vol. 22, p. 91.
  10. Liu, D., Zhang, Y., and Zhou, S., J. Xiamen Univ., 1989, vol. 28, p. 495.
  11. Wei, C., Myung, N., and Rajeshwar, K., J. Electroanal. Chem., 1994, vol. 375, p. 109.
  12. Tomkiewicz, M., Ling, I., and Parsons, W.S., J. Electrochem. Soc., 1982, vol. 129, p. 2016.
  13. Espinosa, A.M., Tascón, M.L., Vázquez, M.D., and Batanero, P.S., Electrochim. Acta, 1992, vol. 37, p. 1165.
  14. Jarzabek, G. and Kublik, Z., J. Electroanal. Chem., 1980, vol. 114, p. 165–177.
  15. Boumerzoung, M. and Dao, L.H., J. Mater. Sci.-Mater. El., 1990, vol. 1, p. 123.
  16. Valdés, M. and Vázquez, M., J. Solid State Electrochem., 2012, vol. 16, p. 3825.
  17. Murali, K.R. and Balasubramanian, M., ECS Trans., 2008, vol. 25, p. 263.
  18. Murali, K.R. and Balasubramanian, M., Curr. Appl. Phys., 2010, vol. 10, pp. 734–739.
  19. Murugan, S., Dhanapandian, S., Manoharan, C., and Murali, K.R., Proc. International Conference on Nanoscience, Engineering and Technology (ICONSET), 2011, p. 69.
  20. Delphine, S.M., Jayachandran, M., and Sanjeeviraja, C., Mater. Chem. Phys., 2003, vol. 81, p. 78.
  21. Natarajan, C., Sharon, M., Lévy-Clément, C., and Neumann-Spallart, M., Thin Solid Films, 1994, vol. 237, p. 118.
  22. An, B.H., Ji, H.M., Wu, J.H., Cho, M.K., Yang, K.Y., Lee, H., and Kim, Y.K., Curr. Appl. Phys., 2009, vol. 9, p. 1338.
  23. Delphine, S.M., Jayachandran, M., and Sanjeeviraj, C., Mater. Res. Bull., 2005, vol. 40, p. 135.
  24. Kressin, A.M., Doan, V.V., Klein, J.D., and Sailor, M.J., Chem. Mater., 1991, vol. 3, p. 1015.
  25. Ayvazian, T., Xing, W., Yan, W., and Penner, R.M., ACS Appl. Mater. Interfaces, 2012, vol. 4, p. 4445.
  26. Gu, X.W., Shadmi, N., Yarden, T.S., Cohen, H., and Joselevich, E., J. Phys. Chem. C, 2012, vol. 116, p. 20121.
  27. Hippel, A. and Blooom, M.C., J. Chem. Phys., 1950, vol. 18, p. 1243.
  28. Ivanov, D.K., Poznyak, C.K., Osipovich, N.P., and Strel’tsova, E.A., Russ. J. Electrochem., 2004, vol. 40, p. 1044.