Статья
2021

XPS Study of Long-Term Passivation of GaAs Surfaces Using Saturated Ammonium Sulfide Solution under Optimum Condition


 Hedieh Mahmoodnia Hedieh Mahmoodnia , Alireza Salehi Alireza Salehi , Valmor Roberto Mastelaro Valmor Roberto Mastelaro
Российский электрохимический журнал
https://doi.org/10.1134/S1023193521050104
Abstract / Full Text

The application of III–V semiconductors, including GaAs, in various optoelectronic devices has attracted considerable attention due to their high electron mobility. The presence of native oxide on GaAs surfaces causes a high surface density of states that can be removed by passivation techniques. One of the most common passivation approaches is the ammonium sulfide ((NH4)2Sx) treatment; however, the GaAs surface tends to re-oxidize after passivation in a short time. This study presents the long-term passivation of GaAs surfaces induced by the use of a saturated ammonium sulfide solution under optimum condition. The X-ray photoelectron spectroscopy (XPS) study was conducted to prove our aim. XPS results demonstrate the removal of the native oxide layer from the GaAs surface immediately after passivation and the absence of surface re-oxidation for several days after passivation and air exposure. Therefore this approach can be used as an effective way to achieve stable passivated surface of GaAs.

Author information
  • Department of Electronics, Faculty of Electrical Engineering, K.N. Toosi University of Technology, 1969764499, Tehran, Iran

    Hedieh Mahmoodnia & Alireza Salehi

  • Institute of Physics of São Carlos (IFSC), University of Sao Paulo, Sao Carlos, Brazil

    Valmor Roberto Mastelaro

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