Preparation and Photoelectrochemical Performances of CuSCN Thin Films Influenced by Electrodeposition Potential
Zhen Wang, Da Chen, Fang Wang, Laishun Qin, Liqun Bai, Xingguo Sun, Yuexiang Huang
Российский электрохимический журнал
https://doi.org/10.1134/S1023193519050148
In this work, p-type CuSCN nanorod thin films were successfully prepared on the fluorine-doped tin oxide (FTO) conductive substrate by a simple electrochemical deposition at different deposition potentials (i.e., −0.1, −0.2, −0.3, −0.4 V), and the influence of deposition potential on the microstructural and photoelectrochemical properties of the prepared CuSCN thin films was then explored. The prepared CuSCN films were nanorod arrays with a rhombohedral β-CuSCN structure, and the better CuSCN crystal structure was achieved when deposited at −0.4 V. The p-type characteristic of the electrodeposited CuSCN thin films were verified by Mott–Schottky measurements. The CuSCN nanorods thin films deposited at −0.2, −0.3, and −0.4 V produced ten times higher photocurrent intensities than the CuSCN thin film deposited at −0.1 V, and the CuSCN thin film deposited at −0.4 V exhibited the best photoelectrochemical performance. The enhanced photoelectrochemical performance of the CuSCN thin film deposited at −0.4 V could be attributed to the better crystal structure, the more charge carrier concentration as well as the more efficient charge separation and migration. This work offers a facile approach to prepare the p-type CuSCN nanorod thin films through electrochemical deposition, and regulate their photoelectrochemical performance by controlling the deposition potential.
- College of Materials Science and Engineering, China Jiliang University, Hangzhou, Zhejiang, 310018, P.R. ChinaZhen Wang, Da Chen, Fang Wang, Laishun Qin, Xingguo Sun & Yuexiang Huang
- Zhejiang Provincial Key Laboratory of Chemical Utilization of Forestry Biomass, Zhejiang A & F University, Lin’an, Zhejiang Province, 311300, ChinaLiqun Bai
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