Changes in the spectrum of surface states of Si−SiO2 structures stimulated by a weak magnetic field
V. N. Davydov
,
S. N. Nesmelov
Российский физический журнал,
1997,
T. 40, p. 794–798
https://doi.org/10.1007/BF02508815
|
1997 |
Electrical properties of surface barrier structures with a dielectric having a formed channel
V. N. Davydov
,
S. N. Nesmelov
Российский физический журнал,
1997,
T. 40, p. 481–485
https://doi.org/10.1007/BF02508779
|
1997 |
Electrical properties of Si-SiO2 systems after the application of a magnetic field
V. N. Davydov
,
S. N. Nesmelov
Российский физический журнал,
1997,
T. 40, p. 176–180
https://doi.org/10.1007/BF02806187
|
1997 |
Photoelectric properties of magnetically sensitive MOS structures
V. N. Davydov
,
O. G. Lanskaya
,
E. P. Lilenko
,
S. N. Nesmelov
Российский физический журнал,
1998,
T. 41, p. 472–475
https://doi.org/10.1007/BF02766509
|
1998 |
Photoelectric properties of inhomogeneous Si-based mis structures
S. N. Nesmelov
Российский физический журнал,
1999,
T. 42, p. 273–277
https://doi.org/10.1007/BF02508306
|
1999 |
Special Features of Local Photoelectrical Properties of Inhomogeneous Metal–Insulator–Semiconductor Structures
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
O. G. Lanskaya
,
E. P. Lilenko
Российский физический журнал,
2000,
T. 43, p. 1020–1022
https://doi.org/10.1023/A:1011307814598
|
2000 |
Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer
A. V. Voitsekhovskii
,
A. P. Kokhanenko
,
S. N. Nesmelov
,
S. I. Lyapunov
,
N. V. Komarov
Российский физический журнал,
2001,
T. 44, p. 1139–1151
https://doi.org/10.1023/A:1015393305423
|
2001 |
Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer
A. V. Voitsekhovskii
,
A. P. Kokhanenko
,
S. N. Nesmelov
,
S. I. Lyapunov
,
N. V. Komarov
Российский физический журнал,
2001,
T. 44, p. 794–805
https://doi.org/10.1023/A:1013691432540
|
2001 |
Limiting Modes for the Threshold Characteristics of IR Photodetectors Based on Silicon–Platinum Silicide Barriers with a Highly-Doped Surface Layer
A. V. Voitsekhovskii
,
A. P. Kokhanenko
,
S. N. Nesmelov
,
V. N. Sokolov
Российский физический журнал,
2002,
T. 45, p. 511–515
https://doi.org/10.1023/A:1021044707919
|
2002 |
Threshold Characteristics of Infrared Photodetectors Based on GeSi/Si Heterojunctions
A. V. Voitsekhovskii
,
A. P. Kokhanenko
,
S. N. Nesmelov
Российский физический журнал,
2003,
T. 46, p. 356–358
https://doi.org/10.1023/A:1025767707972
|
2003 |
The Influence of Resistance of the Epitaxial-Film Volume on the Capacity-Voltage Characteristics of the HgCdTe/AOF and HgCdTe/SiO2/Si3N4 MIS Structures
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
Российский физический журнал,
2005,
T. 48, p. 584–591
https://doi.org/10.1007/s11182-005-0174-2
|
2005 |
Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
A. P. Kokhanenko
,
Yu. P. Mashukov
,
T. I. Zakhar’yash
,
V. V. Vasil’ev
,
V. S. Varavin
,
Yu. G. Sidorov
,
S. A. Dvoretskii
,
N. N. Mikhailov
Российский физический журнал,
2005,
T. 48, p. 143–147
https://doi.org/10.1007/s11182-005-0097-y
|
2005 |
Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23)
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
V. S. Varavin
,
S. A. Dvoretskii
,
N. N. Mikhailov
,
Yu. G. Sidorov
,
V. V. Vasil’ev
,
T. I. Zakhar’yash
,
Yu. P. Mashukov
Российский физический журнал,
2006,
T. 49, p. 1117–1128
https://doi.org/10.1007/s11182-006-0232-4
|
2006 |
Calculation of thermal parameters of SiGe microbolometers
A. V. Voitsekhovskii
,
D. V. Grigoryev
,
V. A. Yuryev
,
S. N. Nesmelov
Российский физический журнал,
2007,
T. 50, p. 1218–1225
https://doi.org/10.1007/s11182-008-9015-4
|
2007 |
Threshold characteristics of polycrystalline germanium silicide microbolometers
A. V. Voitsekhovskii
,
S. N. Nesmelov
Российский физический журнал,
2007,
T. 50, p. 1226–1231
https://doi.org/10.1007/s11182-008-9014-5
|
2007 |
Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods
A. V. Voitsekhovkii
,
S. N. Nesmelov
,
S. M. Dzyadukh
Российский физический журнал,
2009,
T. 52, p. 1003–1020
https://doi.org/10.1007/s11182-010-9332-2
|
2009 |
Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
V. S. Varavin
,
S. A. Dvoretskii
,
N. N. Mikhailov
,
Yu. G. Sidorov
,
V. V. Vasil’ev
,
M. V. Yakushev
Российский физический журнал,
2010,
T. 53, p. 148–154
https://doi.org/10.1007/s11182-010-9399-9
|
2010 |
The electrical characteristics of MBE n-Hg1–x
Cd
x
Te (x = 0.29–0.31) MIS structures with sharp inhomogeneities in composition
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
V. S. Varavin
,
S. A. Dvoretskii
,
N. N. Mikhailov
,
Yu. G. Sidorov
Российский физический журнал,
2011,
T. 54, p.
https://doi.org/10.1007/s11182-011-9609-0
|
2011 |
An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells
S. M. Dzyadukh
,
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. A. Dvoretskii
,
N. N.Mikhailov
,
D. I. Gorn
Российский физический журнал,
2013,
T. 56, p. 778–784
https://doi.org/10.1007/s11182-013-0099-0
|
2013 |
The photoelectrical properties of MIS structures based on heteroepitaxial n-Hg1–xCdxTe (x = 0.21–0.23)
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
V. V. Vasil’ev
,
V. S. Varavin
,
S. A. Dvoretskii
,
N. N. Mikhailov
,
Yu. G. Sidorov
,
M. V. Yakushev
Российский физический журнал,
2013,
T. 55, p. 917–924
https://doi.org/10.1007/s11182-013-9901-2
|
2013 |
Admittance in MIS Structures Based on Graded-GAP MBE p-Hg1–х
Cd
х
Te (x = 0.22–0.23) in the Strong Inversion Mode
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. М. Dzyadukh
Российский физический журнал,
2014,
T. 57, p. 1070–1081
https://doi.org/10.1007/s11182-014-0345-0
|
2014 |
Total Conductance of MIS Structures Based on Graded-Gap p-Hg1–х
Cd
х
Te (x =0.22–0.23) Grown by Molecular Beam Epitaxy
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. М. Dzyadukh
,
V. V. Vasil’ev
,
V. S. Varavin
,
S. A. Dvoretskii
,
N. N. Мikhailov
,
V. D. Kuz’min
,
V. G. Remesnik
Российский физический журнал,
2014,
T. 57, p. 707–716
https://doi.org/10.1007/s11182-014-0294-7
|
2014 |
Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-Hg1–x
Cd
x
Te (x = 0.31–0.32) in a Temperature Range OF 8–300 K
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. М. Dzyadukh
,
V. V. Vasil’ev
,
V. S. Varavin
,
S. A. Dvoretskii
,
N. N. Мikhailov
,
V. D. Kuz’min
,
V. G. Remesnik
Российский физический журнал,
2014,
T. 57, p. 633–641
https://doi.org/10.1007/s11182-014-0286-7
|
2014 |
Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-Hg1–x
Cd
x
Te (x = 0.23) in a Wide Temperature Range
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. М. Dzyadukh
,
V. V. Vasil’ev
,
V. S. Varavin
,
S. A. Dvoretskii
,
N. N. Мikhailov
,
V. D. Kuz’min
,
V. G. Remesnik
Российский физический журнал,
2014,
T. 57, p. 536–544
https://doi.org/10.1007/s11182-014-0272-0
|
2014 |
Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
D. V. Grigor’ev
,
V. F. Tarasenko
,
M. A. Shulepov
Российский физический журнал,
2015,
T. 58, p. 970–977
https://doi.org/10.1007/s11182-015-0597-3
|
2015 |
Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4
А. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
Российский физический журнал,
2015,
T. 58, p. 540–551
https://doi.org/10.1007/s11182-015-0532-7
|
2015 |
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
Российский физический журнал,
2016,
T. 59, p. 920–933
https://doi.org/10.1007/s11182-016-0855-z
|
2016 |
Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
Российский физический журнал,
2016,
T. 59, p. 284–294
https://doi.org/10.1007/s11182-016-0769-9
|
2016 |
Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd
x
Hg1–x
Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
V. S. Varavin
,
V. V. Vasil’ev
,
S. A. Dvoretskii
,
N. N. Mikhailov
,
M. V. Yakushev
,
G. Yu. Sidorov
Российский физический журнал,
2017,
T. 60, p. 360–370
https://doi.org/10.1007/s11182-017-1083-x
|
2017 |
Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–x
Cd
x
Te (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
D. V. Grigor’ev
,
D. V. Lyapunov
Российский физический журнал,
2017,
T. 60, p. 128–139
https://doi.org/10.1007/s11182-017-1051-5
|
2017 |
Generation of Surface Defects in Epitaxial Cd
x
Hg1–xTe Layers by Soft X-ray Radiation of Laser Plasma
V. G. Sredin
,
A. V. Voitsekhovskii
,
O. B. Anan’in
,
I. I. Izhnin
,
A. P. Melekhov
,
S. N. Nesmelov
,
S. M. Dzyadukh
Российский физический журнал,
2018,
T. 60, p. 2197–2200
https://doi.org/10.1007/s11182-018-1346-1
|
2018 |
Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator
S. M. Dzyadukh
,
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
G. Yu. Sidorov
,
V. S. Varavin
,
V. V. Vasil’ev
,
S. A. Dvoretsky
,
N. N. Mikhailov
,
M. V. Yakushev
Российский физический журнал,
2018,
T. 60, p. 1853–1863
https://doi.org/10.1007/s11182-018-1294-9
|
2018 |
Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
S. A. Dvoretsky
,
N. N. Mikhailov
,
G. Yu. Sidorov
Российский физический журнал,
2019,
T. 62, p. 1054–1061
https://doi.org/10.1007/s11182-019-01813-w
|
2019 |
Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
S. A. Dvoretsky
,
N. N. Mikhailov
,
G. Yu. Sidorov
Российский физический журнал,
2019,
T. 62, p. 818–826
https://doi.org/10.1007/s11182-019-01783-z
|
2019 |
Admittance of Organic LED Structures with an Emission YAK-203 Layer
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
T. N. Kopylova
,
K. M. Degtyarenko
,
A. P. Kokhanenko
Российский физический журнал,
2019,
T. 62, p. 306–313
https://doi.org/10.1007/s11182-019-01713-z
|
2019 |
Electrophysical Characteristics of the Pentacene-based MIS Structures with a SiO2 Insulator
V. A. Novikov
,
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
T. N. Kopylova
,
K. M. Degtyarenko
,
E. V. Chernikov
,
V. M. Kalygina
Российский физический журнал,
2019,
T. 62, p. 90–99
https://doi.org/10.1007/s11182-019-01687-y
|
2019 |
Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
Российский физический журнал,
2019,
T. 61, p. 2126–2134
https://doi.org/10.1007/s11182-019-01646-7
|
2019 |
Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
S. A. Dvoretsky
,
N. N. Mikhailov
,
G. Yu. Sidorov
,
M. V. Yakushev
Российский физический журнал,
2020,
T. 63, p. 907–916
https://doi.org/10.1007/s11182-020-02117-0
|
2020 |
Admittance of Barrier Structures Based on Mercury Cadmium Telluride
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
S. A. Dvoretsky
,
N. N. Mikhailov
,
G. Yu. Sidorov
,
M. V. Yakushev
Российский физический журнал,
2020,
T. 63, p. 432–445
https://doi.org/10.1007/s11182-020-02054-y
|
2020 |
Admittance of Pentacene- Based Mis-Structures with Two-Layer Insulator SiO2–Al2O3
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
T. N. Kopylova
,
K. M. Degtyarenko
Российский физический журнал,
2021,
T. 64, p. 1281–1288
https://doi.org/10.1007/s11182-021-02454-8
|
2021 |
Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors
A. V. Voitsekhovskii
,
S. N. Nesmelov
,
S. M. Dzyadukh
,
S. A. Dvoretsky
,
N. N. Mikhailov
,
G. Yu. Sidorov
,
M. V. Yakushev
Российский физический журнал,
2021,
T. 64, p. 763–769
https://doi.org/10.1007/s11182-021-02390-7
|
2021 |