Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions
V. A. Timofeev
,
A. P. Kokhanenko
,
A. I. Nikiforov
,
V. I. Mashanov
,
A. R. Tuktamyshev
,
I. D. Loshkarev
Российский физический журнал,
2015,
T. 58, p. 965–969
https://doi.org/10.1007/s11182-015-0596-4
|
2015 |
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters
V. A. Timofeev
,
A. I. Nikiforov
,
A. P. Kokhanenko
,
A. R. Tuktamyshev
,
V. I. Mashanov
,
I. D. Loshkarev
,
V. A. Novikov
Российский физический журнал,
2017,
T. 60, p. 354–359
https://doi.org/10.1007/s11182-017-1082-y
|
2017 |
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands
M. Yu. Yesin
,
A. I. Nikiforov
,
V. A. Timofeev
,
V. I. Mashanov
,
A. R. Tuktamyshev
,
I. D. Loshkarev
,
O. P. Pchelyakov
Российский физический журнал,
2018,
T. 60, p. 1864–1870
https://doi.org/10.1007/s11182-018-1295-8
|
2018 |
Morphology, Structure, and Optical Properties of SnO (x) Films
A. I. Nikiforov
,
V. A. Timofeev
,
V. I. Mashanov
,
I. A. Azarov
,
I. D. Loshkarev
,
I. V. Korol’kov
,
T. A. Gavrilova
,
M. Yu. Esin
Российский физический журнал,
2020,
T. 63, p. 276–281
https://doi.org/10.1007/s11182-020-02032-4
|
2020 |
Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers
V. A. Timofeev
,
V. I. Mashanov
,
A. I. Nikiforov
,
I. D. Loshkarev
,
I. V. Skvortsov
,
D. V. Gulyaev
,
I. V. Korolkov
,
D. V. Kolyada
,
D. D. Firsov
,
O. S. Komkov
Российский физический журнал,
2021,
T. 64, p. 1505–1512
https://doi.org/10.1007/s11182-021-02483-3
|
2021 |
