Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions
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Российский физический журнал,
2015,
T. 58, p. 965–969
https://doi.org/10.1007/s11182-015-0596-4
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2015 |
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters
V. A. Timofeev
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A. I. Nikiforov
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A. P. Kokhanenko
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A. R. Tuktamyshev
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V. I. Mashanov
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Российский физический журнал,
2017,
T. 60, p. 354–359
https://doi.org/10.1007/s11182-017-1082-y
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2017 |
Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy
M. Yu. Esin
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Российский физический журнал,
2018,
T. 61, p. 1210–1214
https://doi.org/10.1007/s11182-018-1519-y
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2018 |
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands
M. Yu. Yesin
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A. I. Nikiforov
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V. A. Timofeev
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V. I. Mashanov
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A. R. Tuktamyshev
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Российский физический журнал,
2018,
T. 60, p. 1864–1870
https://doi.org/10.1007/s11182-018-1295-8
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2018 |
Morphology, Structure, and Optical Properties of SnO (x) Films
A. I. Nikiforov
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V. A. Timofeev
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V. I. Mashanov
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I. A. Azarov
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I. D. Loshkarev
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I. V. Korol’kov
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T. A. Gavrilova
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Российский физический журнал,
2020,
T. 63, p. 276–281
https://doi.org/10.1007/s11182-020-02032-4
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2020 |
Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers
V. A. Timofeev
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V. I. Mashanov
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A. I. Nikiforov
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I. D. Loshkarev
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I. V. Skvortsov
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Российский физический журнал,
2021,
T. 64, p. 1505–1512
https://doi.org/10.1007/s11182-021-02483-3
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2021 |
