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T. 31, p. 1027–1032
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Electron—Positron annihilation in the narrow-band semiconductor Hg1−xCdxTe
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Российский физический журнал,
1995,
T. 38, p. 1007–1022
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Recombination of nonequilibrium charge carriers in epitaxial Hg1−x Cdx Te MBE films
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A. P. Kokhanenko
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V. S. Vavarin
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T. 40, p. 915–919
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Photosensitive structures using Hg1−xCdxTe solid solutions grown by molecular beam epitaxy
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Российский физический журнал,
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T. 41, p. 773–779
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Spatial distribution profiles of defects in cadmium-mercury-tellurium after ion implantation
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Российский физический журнал,
1998,
T. 41, p. 76–88
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The Action of High-Power Pulsed Beams of Nanosecond Duration on Cadmium–Mercury Telluride Semiconductors
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Российский физический журнал,
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T. 43, p. 729–734
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Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer
A. V. Voitsekhovskii
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S. N. Nesmelov
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N. V. Komarov
Российский физический журнал,
2001,
T. 44, p. 1139–1151
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Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer
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Российский физический журнал,
2001,
T. 44, p. 794–805
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Calculations of Radiation-Induced Defect Profiles in CdHgTe Crystals Exposed to Ion Pulses
A. V. Voitsekhovskii
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A. P. Kokhanenko
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S. A. Shul'ga
Российский физический журнал,
2002,
T. 45, p. 629–637
https://doi.org/10.1023/A:1021163722129
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Limiting Modes for the Threshold Characteristics of IR Photodetectors Based on Silicon–Platinum Silicide Barriers with a Highly-Doped Surface Layer
A. V. Voitsekhovskii
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A. P. Kokhanenko
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S. N. Nesmelov
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V. N. Sokolov
Российский физический журнал,
2002,
T. 45, p. 511–515
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Modeling of the Interaction of High-Power Pulsed Ion Beams with Cadmium-Mercury-Tellurium Semiconductor Targets
A. V. Voitsekhovskii
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S. A. Shul'ga
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Российский физический журнал,
2003,
T. 46, p. 791–799
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Threshold Characteristics of Infrared Photodetectors Based on GeSi/Si Heterojunctions
A. V. Voitsekhovskii
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S. N. Nesmelov
Российский физический журнал,
2003,
T. 46, p. 356–358
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Specific Features of Determining the Electrophysical Parameters of Variband CMT Structures Grown by Molecular-Beam Epitaxy
A. V. Voitsekhovskii
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Российский физический журнал,
2004,
T. 47, p. 764–772
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Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe
A. V. Voitsekhovskii
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A. P. Kokhanenko
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T. I. Zakhar’yash
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V. V. Vasil’ev
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Российский физический журнал,
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T. 48, p. 143–147
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The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE
A. V. Voitsekhovskii
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A. G. Korotaev
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A. P. Kokhanenko
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V. S. Varavin
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Yu. G. Sidorov
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Российский физический журнал,
2006,
T. 49, p. 929–933
https://doi.org/10.1007/s11182-006-0204-8
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Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching
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V. S. Volkov
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D. V. Grigor’ev
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I. I. Izhnin
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A. G. Korotaev
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Российский физический журнал,
2008,
T. 51, p. 936–942
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Modeling the dependence of the signal/noise ratio on the detuning of the parameters of the communication system using deterministic chaos
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A. P. Kokhanenko
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B. N. Poizner
Российский физический журнал,
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Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications
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A. I. Nikiforov
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A. V. Voitsekhovskii
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Российский физический журнал,
2011,
T. 53, p. 943–948
https://doi.org/10.1007/s11182-011-9514-6
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A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric pressure
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M. A. Shulepov
Российский физический журнал,
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T. 54, p. 1152–1155
https://doi.org/10.1007/s11182-012-9723-7
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Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates
E. A. Emelyanov
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O. P. Pchelyakov
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I. D. Loshkarev
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V. A. Seleznev
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M. A. Putyato
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B. R. Semyagin
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V. V. Preobrazhenskii
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Zhicuan Niu
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Российский физический журнал,
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T. 56, p. 55–61
https://doi.org/10.1007/s11182-013-9994-7
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Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions
V. A. Timofeev
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A. P. Kokhanenko
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A. I. Nikiforov
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V. I. Mashanov
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A. R. Tuktamyshev
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I. D. Loshkarev
Российский физический журнал,
2015,
T. 58, p. 965–969
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Measurement of the Charge Carrier Mobility in MEH-PPV and MEH-PPV-POSS Organic Semiconductor Films
I. V. Romanov
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A. V. Voitsekhovskii
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K. M. Dyagterenko
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T. N. Kopylova
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A. P. Kokhanenko
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E. N. Nikonova
Российский физический журнал,
2015,
T. 57, p. 1584–1592
https://doi.org/10.1007/s11182-015-0422-z
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Growth of Epitaxial SiSn Films with High Sn Content for IR Converters
V. A. Timofeev
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A. I. Nikiforov
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A. P. Kokhanenko
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A. R. Tuktamyshev
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V. I. Mashanov
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I. D. Loshkarev
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V. A. Novikov
Российский физический журнал,
2017,
T. 60, p. 354–359
https://doi.org/10.1007/s11182-017-1082-y
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Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures
R. M. H. Douhan
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A. P. Kokhanenko
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K. A. Lozovoy
Российский физический журнал,
2018,
T. 61, p. 1194–1201
https://doi.org/10.1007/s11182-018-1517-0
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Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces
A. P. Kokhanenko
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K. A. Lozovoy
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A. V. Voitsekhovskii
Российский физический журнал,
2018,
T. 60, p. 1871–1879
https://doi.org/10.1007/s11182-018-1296-7
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Admittance of Organic LED Structures with an Emission YAK-203 Layer
A. V. Voitsekhovskii
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S. N. Nesmelov
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S. M. Dzyadukh
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T. N. Kopylova
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K. M. Degtyarenko
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A. P. Kokhanenko
Российский физический журнал,
2019,
T. 62, p. 306–313
https://doi.org/10.1007/s11182-019-01713-z
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2019 |
Growth of Germanium Quantum Dots on Oxidized Silicon Surface
K. A. Lozovoy
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A. P. Kokhanenko
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N. Yu. Akimenko
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V. V. Dirko
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A. V. Voitsekhovskii
Российский физический журнал,
2020,
T. 63, p. 296–302
https://doi.org/10.1007/s11182-020-02035-1
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2020 |
Two-Dimensional Materials of Group IVA: Latest Advances in Epitaxial Methods of Growth
K. A. Lozovoy
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V. V. Dirko
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V. P. Vinarskiy
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A. P. Kokhanenko
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A. V. Voitsekhovskii
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N. Yu. Akimenko
Российский физический журнал,
2022,
T. 64, p. 1583–1591
https://doi.org/10.1007/s11182-022-02495-7
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2022 |