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Публикации
Работа Год
Radiation defects in Ar+-ion-implanted Hg1−xCdxTe crystals
A. S. Petrov A. S. Petrov , V. S. Kulikauskas V. S. Kulikauskas , Yu. V. Lilenko Yu. V. Lilenko , A. P. Kokhanenko A. P. Kokhanenko , A. V. Voitsekhovskii A. V. Voitsekhovskii , E. M. Kiryushkin E. M. Kiryushkin , K. V. Shastov K. V. Shastov , K. R. Kurbanov K. R. Kurbanov , A. P. Mamontov A. P. Mamontov , V. A. Korotchenko V. A. Korotchenko
Российский физический журнал, 1988, T. 31, p. 1027–1032
https://doi.org/10.1007/BF01101176
1988
Electron—Positron annihilation in the narrow-band semiconductor Hg1−xCdxTe
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. G. Korotaev A. G. Korotaev , A. P. Kokhanenko A. P. Kokhanenko
Российский физический журнал, 1995, T. 38, p. 1007–1022
https://doi.org/10.1007/BF00559036
1995
Recombination of nonequilibrium charge carriers in epitaxial Hg1−x Cdx Te MBE films
A. V. Voitsekhovskii A. V. Voitsekhovskii , Yu. A. Denisov Yu. A. Denisov , A. P. Kokhanenko A. P. Kokhanenko , V. S. Vavarin V. S. Vavarin , S. A. Dvoretskii S. A. Dvoretskii , N. N. Mikhailov N. N. Mikhailov , Yu. G. Sidorov Yu. G. Sidorov , M. V. Yakushev M. V. Yakushev
Российский физический журнал, 1997, T. 40, p. 915–919
https://doi.org/10.1007/BF02523110
1997
Photosensitive structures using Hg1−xCdxTe solid solutions grown by molecular beam epitaxy
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. P. Kokhanenko A. P. Kokhanenko
Российский физический журнал, 1998, T. 41, p. 773–779
https://doi.org/10.1007/BF02510642
1998
Spatial distribution profiles of defects in cadmium-mercury-tellurium after ion implantation
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. P. Kokhanenko A. P. Kokhanenko
Российский физический журнал, 1998, T. 41, p. 76–88
https://doi.org/10.1007/BF02813685
1998
The Action of High-Power Pulsed Beams of Nanosecond Duration on Cadmium–Mercury Telluride Semiconductors
A. V. Voitsekhovsky A. V. Voitsekhovsky , A. P. Kokhanenko A. P. Kokhanenko , S. A. Shulga S. A. Shulga
Российский физический журнал, 2000, T. 43, p. 729–734
https://doi.org/10.1023/A:1009471718086
2000
Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. P. Kokhanenko A. P. Kokhanenko , S. N. Nesmelov S. N. Nesmelov , S. I. Lyapunov S. I. Lyapunov , N. V. Komarov N. V. Komarov
Российский физический журнал, 2001, T. 44, p. 1139–1151
https://doi.org/10.1023/A:1015393305423
2001
Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. P. Kokhanenko A. P. Kokhanenko , S. N. Nesmelov S. N. Nesmelov , S. I. Lyapunov S. I. Lyapunov , N. V. Komarov N. V. Komarov
Российский физический журнал, 2001, T. 44, p. 794–805
https://doi.org/10.1023/A:1013691432540
2001
Calculations of Radiation-Induced Defect Profiles in CdHgTe Crystals Exposed to Ion Pulses
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. P. Kokhanenko A. P. Kokhanenko , S. A. Shul'ga S. A. Shul'ga
Российский физический журнал, 2002, T. 45, p. 629–637
https://doi.org/10.1023/A:1021163722129
2002
Limiting Modes for the Threshold Characteristics of IR Photodetectors Based on Silicon–Platinum Silicide Barriers with a Highly-Doped Surface Layer
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. P. Kokhanenko A. P. Kokhanenko , S. N. Nesmelov S. N. Nesmelov , V. N. Sokolov V. N. Sokolov
Российский физический журнал, 2002, T. 45, p. 511–515
https://doi.org/10.1023/A:1021044707919
2002
Modeling of the Interaction of High-Power Pulsed Ion Beams with Cadmium-Mercury-Tellurium Semiconductor Targets
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. P. Kokhanenko A. P. Kokhanenko , S. A. Shul'ga S. A. Shul'ga , R. Smith R. Smith
Российский физический журнал, 2003, T. 46, p. 791–799
https://doi.org/10.1023/B:RUPJ.0000010976.38145.38
2003
Threshold Characteristics of Infrared Photodetectors Based on GeSi/Si Heterojunctions
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. P. Kokhanenko A. P. Kokhanenko , S. N. Nesmelov S. N. Nesmelov
Российский физический журнал, 2003, T. 46, p. 356–358
https://doi.org/10.1023/A:1025767707972
2003
Specific Features of Determining the Electrophysical Parameters of Variband CMT Structures Grown by Molecular-Beam Epitaxy
A. V. Voitsekhovskii A. V. Voitsekhovskii , D. V. Grigor'ev D. V. Grigor'ev , A. G. Korotaev A. G. Korotaev , A. P. Kokhanenko A. P. Kokhanenko
Российский физический журнал, 2004, T. 47, p. 764–772
https://doi.org/10.1023/B:RUPJ.0000049752.62418.6b
2004
Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe
A. V. Voitsekhovskii A. V. Voitsekhovskii , S. N. Nesmelov S. N. Nesmelov , A. P. Kokhanenko A. P. Kokhanenko , Yu. P. Mashukov Yu. P. Mashukov , T. I. Zakhar’yash T. I. Zakhar’yash , V. V. Vasil’ev V. V. Vasil’ev , V. S. Varavin V. S. Varavin , Yu. G. Sidorov Yu. G. Sidorov , S. A. Dvoretskii S. A. Dvoretskii , N. N. Mikhailov N. N. Mikhailov
Российский физический журнал, 2005, T. 48, p. 143–147
https://doi.org/10.1007/s11182-005-0097-y
2005
The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE
A. V. Voitsekhovskii A. V. Voitsekhovskii , A. G. Korotaev A. G. Korotaev , A. P. Kokhanenko A. P. Kokhanenko , D. V. Grigor’ev D. V. Grigor’ev , V. S. Varavin V. S. Varavin , S. A. Dvoretskii S. A. Dvoretskii , Yu. G. Sidorov Yu. G. Sidorov , N. N. Mikhailov N. N. Mikhailov , N. Kh. Talipov N. Kh. Talipov
Российский физический журнал, 2006, T. 49, p. 929–933
https://doi.org/10.1007/s11182-006-0204-8
2006
Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching
A. V. Voitsekhovskii A. V. Voitsekhovskii , V. S. Volkov V. S. Volkov , D. V. Grigor’ev D. V. Grigor’ev , I. I. Izhnin I. I. Izhnin , A. G. Korotaev A. G. Korotaev , A. P. Kokhanenko A. P. Kokhanenko , M. Posyatsk M. Posyatsk , V. G. Sredin V. G. Sredin , N. Kh. Talipov N. Kh. Talipov
Российский физический журнал, 2008, T. 51, p. 936–942
https://doi.org/10.1007/s11182-009-9134-6
2008
Modeling the dependence of the signal/noise ratio on the detuning of the parameters of the communication system using deterministic chaos
I. V. Romanov I. V. Romanov , I. V. Izmailov I. V. Izmailov , A. P. Kokhanenko A. P. Kokhanenko , B. N. Poizner B. N. Poizner
Российский физический журнал, 2011, T. 54, p.
https://doi.org/10.1007/s11182-011-9652-x
2011
Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications
O. P. Pchelyakov O. P. Pchelyakov , A. V. Dvurechenskii A. V. Dvurechenskii , A. I. Nikiforov A. I. Nikiforov , A. V. Voitsekhovskii A. V. Voitsekhovskii , D. V. Grigor’ev D. V. Grigor’ev , A. P. Kokhanenko A. P. Kokhanenko
Российский физический журнал, 2011, T. 53, p. 943–948
https://doi.org/10.1007/s11182-011-9514-6
2011
A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric pressure
A. V. Voitsekhovskii A. V. Voitsekhovskii , D. V. Grigor’ev D. V. Grigor’ev , A. G. Korotaev A. G. Korotaev , A. P. Kokhanenko A. P. Kokhanenko , V. F. Tarasenko V. F. Tarasenko , M. A. Shulepov M. A. Shulepov
Российский физический журнал, 2012, T. 54, p. 1152–1155
https://doi.org/10.1007/s11182-012-9723-7
2012
Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates
E. A. Emelyanov E. A. Emelyanov , A. P. Kokhanenko A. P. Kokhanenko , O. P. Pchelyakov O. P. Pchelyakov , I. D. Loshkarev I. D. Loshkarev , V. A. Seleznev V. A. Seleznev , M. A. Putyato M. A. Putyato , B. R. Semyagin B. R. Semyagin , V. V. Preobrazhenskii V. V. Preobrazhenskii , Zhicuan Niu Zhicuan Niu , Haiqiao Ni Haiqiao Ni
Российский физический журнал, 2013, T. 56, p. 55–61
https://doi.org/10.1007/s11182-013-9994-7
2013
Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions
V. A. Timofeev V. A. Timofeev , A. P. Kokhanenko A. P. Kokhanenko , A. I. Nikiforov A. I. Nikiforov , V. I. Mashanov V. I. Mashanov , A. R. Tuktamyshev A. R. Tuktamyshev , I. D. Loshkarev I. D. Loshkarev
Российский физический журнал, 2015, T. 58, p. 965–969
https://doi.org/10.1007/s11182-015-0596-4
2015
Measurement of the Charge Carrier Mobility in MEH-PPV and MEH-PPV-POSS Organic Semiconductor Films
I. V. Romanov I. V. Romanov , A. V. Voitsekhovskii A. V. Voitsekhovskii , K. M. Dyagterenko K. M. Dyagterenko , T. N. Kopylova T. N. Kopylova , A. P. Kokhanenko A. P. Kokhanenko , E. N. Nikonova E. N. Nikonova
Российский физический журнал, 2015, T. 57, p. 1584–1592
https://doi.org/10.1007/s11182-015-0422-z
2015
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters
V. A. Timofeev V. A. Timofeev , A. I. Nikiforov A. I. Nikiforov , A. P. Kokhanenko A. P. Kokhanenko , A. R. Tuktamyshev A. R. Tuktamyshev , V. I. Mashanov V. I. Mashanov , I. D. Loshkarev I. D. Loshkarev , V. A. Novikov V. A. Novikov
Российский физический журнал, 2017, T. 60, p. 354–359
https://doi.org/10.1007/s11182-017-1082-y
2017
Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures
R. M. H. Douhan R. M. H. Douhan , A. P. Kokhanenko A. P. Kokhanenko , K. A. Lozovoy K. A. Lozovoy
Российский физический журнал, 2018, T. 61, p. 1194–1201
https://doi.org/10.1007/s11182-018-1517-0
2018
Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces
A. P. Kokhanenko A. P. Kokhanenko , K. A. Lozovoy K. A. Lozovoy , A. V. Voitsekhovskii A. V. Voitsekhovskii
Российский физический журнал, 2018, T. 60, p. 1871–1879
https://doi.org/10.1007/s11182-018-1296-7
2018
Admittance of Organic LED Structures with an Emission YAK-203 Layer
A. V. Voitsekhovskii A. V. Voitsekhovskii , S. N. Nesmelov S. N. Nesmelov , S. M. Dzyadukh S. M. Dzyadukh , T. N. Kopylova T. N. Kopylova , K. M. Degtyarenko K. M. Degtyarenko , A. P. Kokhanenko A. P. Kokhanenko
Российский физический журнал, 2019, T. 62, p. 306–313
https://doi.org/10.1007/s11182-019-01713-z
2019
Growth of Germanium Quantum Dots on Oxidized Silicon Surface
K. A. Lozovoy K. A. Lozovoy , A. P. Kokhanenko A. P. Kokhanenko , N. Yu. Akimenko N. Yu. Akimenko , V. V. Dirko V. V. Dirko , A. V. Voitsekhovskii A. V. Voitsekhovskii
Российский физический журнал, 2020, T. 63, p. 296–302
https://doi.org/10.1007/s11182-020-02035-1
2020
Two-Dimensional Materials of Group IVA: Latest Advances in Epitaxial Methods of Growth
K. A. Lozovoy K. A. Lozovoy , V. V. Dirko V. V. Dirko , V. P. Vinarskiy V. P. Vinarskiy , A. P. Kokhanenko A. P. Kokhanenko , A. V. Voitsekhovskii A. V. Voitsekhovskii , N. Yu. Akimenko N. Yu. Akimenko
Российский физический журнал, 2022, T. 64, p. 1583–1591
https://doi.org/10.1007/s11182-022-02495-7
2022
Работа Год