Certain characteristics of the etching of gallium arsenide single crystals
I. V. Ivonin
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L. M. Krasil'nikova
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M. P. Yakubenya
Российский физический журнал,
1971,
T. 14, p. 547–549
https://doi.org/10.1007/BF00817995
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1971 |
Effect of the method of processing the surface of gallium arsenide on its micromorphology
I. V. Ivonin
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L. M. Krasil'nikova
Российский физический журнал,
1972,
T. 15, p. 1665–1667
https://doi.org/10.1007/BF01231254
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1972 |
Electron microscope investigation of the morphology of the etched surface of gallium arsenide
I. V. Ivonin
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L. M. Krasil'nikova
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M. P. Yakubenya
Российский физический журнал,
1972,
T. 15, p. 722–725
https://doi.org/10.1007/BF00893043
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1972 |
Micromorphology of autoepitaxial gallium arsenide: Effects of substrate orientation
L. G. Lavrent'eva
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I. V. Ivonin
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L. M. Krasil'nikova
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V. A. Moskovkin
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M. P. Yakubenya
Российский физический журнал,
1973,
T. 16, p. 1469–1471
https://doi.org/10.1007/BF00894431
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1973 |
Effects of crystallization temperature on the growth and doping of autoepitaxial gallium arsenide films
L. G. Lavrent'eva
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I. V. Ivonin
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L. M. Krasil'nikova
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Yu. M. Rumyantsev
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M. P. Yakubenya
Российский физический журнал,
1973,
T. 16, p. 794–797
https://doi.org/10.1007/BF00895692
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1973 |
Investigation of transitional layers in epitaxial gallium arsenide: Micromorphology and electron distribution in the layers, in dependence on the growth time in an iodine system
L. G. Lavrent'eva
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M. D. Vilisova
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I. V. Ivonin
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L. M. Krasil'nikova
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F. A. Kuznetsov
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Yu. M. Rumyantsev
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M. P. Yakubenya
Российский физический журнал,
1973,
T. 16, p. 189–195
https://doi.org/10.1007/BF00892672
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1973 |
Effect of the means of substrate processing on the growth kinetics of autoepitaxial layers of gallium arsenide and their properties
L. G. Lavrent'eva
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L. P. Porokhovnichenko
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I. V. Ivonin
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L. M. Krasil'nikova
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N. N. Ivanova
Российский физический журнал,
1974,
T. 17, p. 12–16
https://doi.org/10.1007/BF00889906
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1974 |
Electron microscopy of growth surfaces on epitaxial films
L. M. Krasil'nikova
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I. V. Ivonin
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L. V. Masarnovskii
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L. N. Sysoeva
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M. P. Yakubenya
Российский физический журнал,
1975,
T. 18, p. 1074–1077
https://doi.org/10.1007/BF01110023
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1975 |
Investigation of transition layers in epitaxial gallium arsenide detection of layers by decoration
L. M. Krasil'nikova
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I. V. Ivonin
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M. D. Vilisova
Российский физический журнал,
1975,
T. 18, p. 1166–1168
https://doi.org/10.1007/BF01110046
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1975 |
Micromorphology of auto-epitaxial layers of gallium arsenide
L. G. Lavrent'eva
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I. V. Ivonin
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L. P. Porokhovnichenko
Химия и современные технологии,
1975,
T. 18, p. 1258–1264
https://doi.org/10.1007/BF00892718
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1975 |
Effect of dopant type on the formation of the growth relief of gallium arsenide in a chloride gas-transport system
L. G. Lavrent'eva
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I. V. Ivonin
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L. M. Krasil'nikova
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L. P. Porokhovnichenko
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I. A. Vyatkina
Российский физический журнал,
1976,
T. 19, p. 31–37
https://doi.org/10.1007/BF00894311
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1976 |
Growth of gallium arsenide in a GaAs-AsCl3-H2 gas-transport system. 2. Growth mechanism
L. G. Lavrent'eva
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I. V. Ivonin
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L. P. Porokhovnichenko
Российский физический журнал,
1977,
T. 20, p. 1551–1555
https://doi.org/10.1007/BF00897419
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Kinetics of formation of defects of the step stopping center (SSC) type in gas-phase epitaxy of gallium arsenide
I. V. Ivonin
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L. M. Krasil'nikova
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L. G. Lavrent'eva
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G. F. Lymar'
Российский физический журнал,
1979,
T. 22, p. 672–674
https://doi.org/10.1007/BF00891572
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Growth mechanism for thin autoepitaxial silicon layers grown in a low-temperature chloride process
I. V. Ivonin
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L. M. Krasil'nikova
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L. G. Lavrent'eva
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B. V. Orion
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I. M. Skvortsov
Российский физический журнал,
1979,
T. 22, p. 157–161
https://doi.org/10.1007/BF00892008
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Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief
G. A. Aleksandrova
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I. V. Ivonin
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L. M. Krasil'nikova
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L. F. Lavrent'eva
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A. E. Shubin
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M. P. Yakubenya
Российский физический журнал,
1980,
T. 23, p. 813–817
https://doi.org/10.1007/BF00892532
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1980 |
Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems
L. G. Lavrent'eva
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V. A. Moskovkin
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I. V. Ivonin
Российский физический журнал,
1981,
T. 24, p. 282–286
https://doi.org/10.1007/BF00891609
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Influence of crystallization temperature on growth rate of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2
L. G. Lavrent'eva
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V. G. Ivanov
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I. V. Ivonin
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V. A. Moskovkin
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S. E. Toropov
Российский физический журнал,
1982,
T. 25, p. 859–862
https://doi.org/10.1007/BF00892410
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Influence of crystallization temperature on the structure of growth surfaces of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2
L. G. Lavrent'eva
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V. G. Ivanov
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I. V. Ivonin
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V. A. Moskovkin
Российский физический журнал,
1982,
T. 25, p. 863–867
https://doi.org/10.1007/BF00892411
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Anisotropy during vapor-phase epitaxy of indium arsenide
G. A. Aleksandrova
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I. V. Ivonin
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L. G. Lavrent'eva
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G. F. Lymar'
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M. P. Ruzaikin
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A. E. Shubin
Российский физический журнал,
1982,
T. 25, p. 322–325
https://doi.org/10.1007/BF00906201
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The growth rate of epitaxial InAs layers as a function of AsCl3 in the InAs-AsCl3-H2 system
G. A. Aleksandrova
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I. V. Ivonin
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L. M. Kasil'nikova
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L. G. Lavrent'eva
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P. B. Pashchenko
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A. E. Shubin
Российский физический журнал,
1983,
T. 26, p. 1008–1010
https://doi.org/10.1007/BF00896661
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Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2
G. A. Aleksandrova
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I. V. Ivonin
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L. M. Krasil'nikova
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L. G. Lavrent'eva
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P. B. Paschenko
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A. E. Shubin
Российский физический журнал,
1984,
T. 27, p. 379–383
https://doi.org/10.1007/BF00898605
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Phase interaction in GaAs contacts with group I metals and its relationship to the degradation of structures with a Schottky barrier
V. G. Bozhkov
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K. V. Soldatenko
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M. P. Yakubenya
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I. V. Ivonin
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V. M. Zavodchikov
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A. A. Yatis
Российский физический журнал,
1985,
T. 28, p. 704–709
https://doi.org/10.1007/BF00895518
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Electron-microscope studies of the surface of epitaxial GaAs layers in the proximity of the (111)A face
I. V. Ivonin
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S. E. Toropov
Российский физический журнал,
1987,
T. 30, p. 725–729
https://doi.org/10.1007/BF00897467
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Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B
G. A. Aleksandrova
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I. V. Ivonin
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L. G. Lavrent'eva
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P. B. Pashchenko
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M. V. Chekanova
Российский физический журнал,
1988,
T. 31, p. 759–763
https://doi.org/10.1007/BF00895989
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Solid-state recrystallization processes in Ni-GaAs and Pd-GaAs structures
L. M. Krasil'nikova
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M. P. Yakubenya
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N. K. Maksimova
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G. K. Arbuzova
Российский физический журнал,
1989,
T. 32, p. 207–211
https://doi.org/10.1007/BF00897386
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Use of ab etchant for clarifying the structural-impurity inhomogeneties in epitaxial layers of GaAs
I. V. Ivonin
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N. Ya. Karimova
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N. N. Krivolapov
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L. G. Lavrent'eva
Российский физический журнал,
1992,
T. 35, p. 487–489
https://doi.org/10.1007/BF00558865
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Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide
I. V. Ivonin
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N. N. Krivolapov
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L. G. Lavrent'eva
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L. P. Porokhovnichenko
Российский физический журнал,
1992,
T. 35, p. 51–52
https://doi.org/10.1007/BF01324985
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Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs
I. V. Ivonin
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L. G. Lavrent'eva
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V. S. Lukash
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S. V. Subach
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E. V. Chernikov
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A. N. Tarzimyanov
Российский физический журнал,
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T. 39, p. 571–575
https://doi.org/10.1007/BF02437023
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Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy
I. A. Bobrovnikova
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A. I. Veinger
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M. D. Vilisova
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I. V. Ivonin
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L. G. Lavrent'eva
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D. I. Lubyshev
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V. V. Preobrazhenskii
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M. A. Putyato
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B. R. Semyagin
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S. V. Subach
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V. V. Chaldyshev
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M. P. Yakubenya
Российский физический журнал,
1998,
T. 41, p. 885–893
https://doi.org/10.1007/BF02508721
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Physics of complex semiconductor crystals and their structure
V. N. Brudnyi
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O. V. Voevodina
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V. G. Voevodin
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S. N. Grinyaev
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I. V. Ivonin
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G. F. Karavaev
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L. G. Lavrent'eva
Российский физический журнал,
1998,
T. 41, p. 754–767
https://doi.org/10.1007/BF02510640
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Formation of a transition layer during heteroepitaxy of III–V compound semiconductors in gas-phase epitaxy systems
M. D. Vilisova
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I. V. Ivonin
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T. V. Korableva
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L. G. Lavrent'eva
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V. S. Lukash
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S. V. Subach
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I. T. Shulepov
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M. P. Yakubenya
Российский физический журнал,
1999,
T. 42, p. 17–21
https://doi.org/10.1007/BF02508239
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The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy
B. Bobrovnikova
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M. D. Vilisova
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I. V. Ivonin
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L. G. Lavrent'yeva
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V. V. Preobrazhenskii
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M. A. Putyato
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B. R. Semyagin
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S. V. Subach
Российский физический журнал,
2000,
T. 43, p. 816–820
https://doi.org/10.1023/A:1009476531833
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Effect of the Arsenic Concentration on the Characteristics of the Growth Step Echelon in GaAs Epitaxy
I. V. Ivonin
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L. G. Lavrent'eva
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G. A. Aleksandrova
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L. L. Devyat'yarova
Российский физический журнал,
2002,
T. 45, p. 997–1000
https://doi.org/10.1023/A:1022815017262
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2002 |
Interaction of Growth Steps on the Surface of InAs Epitaxial Layers in Vapor-Phase Epitaxy
I. V. Ivonin
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L. L. Devyat'yarova
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L. G. Lavrent'eva
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G. A. Aleksandrova
Российский физический журнал,
2002,
T. 45, p. 638–642
https://doi.org/10.1023/A:1021115906200
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Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step
I. V. Ivonin
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L. M. Krasil'nikova
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L. G. Lavrent'eva
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L. P. Porokhovnichenko
Российский физический журнал,
2002,
T. 45, p. 493–497
https://doi.org/10.1023/A:1021088522941
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Influence of the Substrate Orientation on the Silicon Capture into A- and B- Sublattices of Gallium Arsenide in Molecular Beam Epitaxy
I. A. Bobrovnikova
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M. D. Vilisova
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I. V. Ivonin
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L. G. Lavrent'eva
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V. V. Preobrazhenskii
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M. A. Putyato
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B. R. Semyagin
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S. V. Subach
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Российский физический журнал,
2002,
T. 45, p. 414–418
https://doi.org/10.1023/A:1020543427057
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Study of the Elementary Growth Processes During Vapor-Phase Epitaxy of Semiconducting III–V Compounds
I. V. Ivonin
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I. A. Bobrovnikova
Российский физический журнал,
2003,
T. 46, p. 577–584
https://doi.org/10.1023/B:RUPJ.0000008183.14752.fd
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2003 |
Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy
L. G. Lavrentieva
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M. D. Vilisova
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I. A. Bobrovnikova
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I. V. Ivonin
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V. V. Preobrazhenskii
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V. V. Chaldyshev
Российский физический журнал,
2006,
T. 49, p. 1334–1343
https://doi.org/10.1007/s11182-006-0263-x
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The role of the adsortption layer in the formation of phase inhomogeneity at the InP/GaAs interface
I. V. Ivonin
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S. V. Subach
Российский физический журнал,
2006,
T. 49, p. 580–588
https://doi.org/10.1007/s11182-006-0146-1
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2006 |
Physics of semiconductors and dielectrics theoretical and experimental study of surface Processes during vapor-phase epitaxy of III–V compounds
I. A. Bobrovnikova
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I. V. Ivonin
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S. E. Toropov
Российский физический журнал,
2006,
T. 49, p. 455–460
https://doi.org/10.1007/s11182-006-0126-5
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Erosion of the GaAs target under irradiation by a high-power pulsed ion beam
Li Tszen’ Fen’
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G. E. Remnev
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M. S. Saltymakov
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V. I. Gusel’nikov
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V. A. Makeev
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I. V. Ivonin
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E. P. Naiden
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V. I. Yurchenko
Российский физический журнал,
2007,
T. 50, p. 66–70
https://doi.org/10.1007/s11182-007-0007-6
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2007 |
Current limitation in A
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5 nitride light-emitting diodes under forward bias
I. A. Prudaev
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I. V. Ivonin
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O. P. Tolbanov
Российский физический журнал,
2012,
T. 54, p. 1372–1374
https://doi.org/10.1007/s11182-012-9756-y
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Evolution of Surface Morphology of Anthracene Single Crystals Under Annealing
V. A. Novikov
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R. M. Gadirov
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T. N. Kopylova
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T. A. Solodova
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I. A. Bobrovnikova
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I. V. Ivonin
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E. V. Tereshchenko
Российский физический журнал,
2019,
T. 62, p. 1073–1076
https://doi.org/10.1007/s11182-019-01816-7
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Influence of UV Radiation on the Processes Proceeding on the Anthracene Single Crystal Surface
V. A. Novikov
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T. N. Kopylova
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I. V. Ivonin
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R. M. Gadirov
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E. V. Tereshchenko
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T. A. Solodova
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K. V. Kareva
Российский физический журнал,
2020,
T. 63, p. 599–606
https://doi.org/10.1007/s11182-020-02073-9
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Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics
S. S. Khludkov
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I. A. Prudaev
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L. O. Root
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O. P. Tolbanov
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I. V. Ivonin
Российский физический журнал,
2021,
T. 63, p. 2013–2024
https://doi.org/10.1007/s11182-021-02264-y
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2021 |
Formation of Dislocations in the Process of Impurity Diffusion in GaAs
S. S. Khludkov
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I. A. Prudaev
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O. P. Tolbanov
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I. V. Ivonin
Российский физический журнал,
2022,
T. 64, p. 2350–2356
https://doi.org/10.1007/s11182-022-02596-3
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2022 |