Gold-gallium arsenide surface-barrier junctions
N. K. Maksimova
,
A. P. Vyatkin
,
A. A. Zharov
Химия и современные технологии,
1968,
T. 11, p. 58–59
https://doi.org/10.1007/BF00816221
|
1968 |
Transport mechanism at a metal-gallium arsenide contact
A. P. Vyatkin
,
N. K. Maksimova
,
G. V. Zhivotov
,
Yu. A. Zotov
Российский физический журнал,
1971,
T. 14, p. 61–65
https://doi.org/10.1007/BF00819861
|
1971 |
Influence of heat treatment on the characteristics of diodes with a schottky barrier
I. D. Romanova
,
N. K. Maksimova
,
E. N. Pekarskii
,
M. P. Yakubenya
Российский физический журнал,
1976,
T. 19, p. 534–536
https://doi.org/10.1007/BF00951998
|
1976 |
Surface-barrier structures on AlxGa1−xSb. I. Preparation and physical model of the contact
G. K. Arbuzova
,
A. A. Vilisov
,
V. P. Germogenov
,
N. K. Maksimova
,
N. G. Filonov
Российский физический журнал,
1979,
T. 22, p. 585–589
https://doi.org/10.1007/BF00891547
|
1979 |
Surface-barrier structures on AlxGa1−xSb. II. Band gap dependence of barrier height
G. K. Arbuzova
,
A. A. Vilisov
,
V. P. Germogenov
,
N. K. Maksimova
Российский физический журнал,
1979,
T. 22, p. 589–593
https://doi.org/10.1007/BF00891548
|
1979 |
Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1−xSb
A. A. Vilisov
,
V. P. Germogenov
,
N. K. Maksimova
,
L. E. Épiktetova
Российский физический журнал,
1980,
T. 23, p. 284–289
https://doi.org/10.1007/BF00893550
|
1980 |
Interphase interactions in a Pd-GaAs system and their effect on electrical properties of schottky-barrier structures I. effect of heat treatment on characteristics of GaAs-Pd/Ni contacts
A. P. Vyatkin
,
N. K. Maksimova
,
N. M. Panova
,
E. N. Pekarskii
,
I. D. Romanova
,
M. P. Yakubenya
Российский физический журнал,
1981,
T. 24, p. 295–298
https://doi.org/10.1007/BF00898256
|
1981 |
Phase interactions in the Pd-GaAs system and effects on structures with schottky barriers II. Examination of a gallium arsenide-metal interface by the secondary ion-ion emission method
A. P. Vyatkin
,
L. G. Kositsin
,
N. K. Maksimova
,
A. M. Misik
,
V. P. Yanovskii
Российский физический журнал,
1981,
T. 24, p. 299–301
https://doi.org/10.1007/BF00898257
|
1981 |
Defects in Schottky barrier structures
A. P. Vyatkin
,
N. K. Maksimova
Российский физический журнал,
1983,
T. 26, p. 952–963
https://doi.org/10.1007/BF00896649
|
1983 |
Physicochemical interactions in thin film Pb-GaAs structures upon thermal annealing
V. P. Yanovskii
,
N. K. Maksimova
,
G. K. Arbuzova
,
V. I. Morozov
,
A. M. Misik
,
G. A. Verozubova
Российский физический журнал,
1987,
T. 30, p. 730–734
https://doi.org/10.1007/BF00897468
|
1987 |
Effect of Ga and As sublayers on the structures and properties of Ni-GaAs contacts
I. D. Romanova
,
N. K. Maksimova
,
L. Yu. Potakhova
,
V. P. Yanovskii
,
M. P. Yakubenya
,
O. M. Ivleva
,
A. M. Misik
,
V. S. Morozov
Российский физический журнал,
1987,
T. 30, p. 131–136
https://doi.org/10.1007/BF00898151
|
1987 |
Solid-state recrystallization processes in Ni-GaAs and Pd-GaAs structures
L. M. Krasil'nikova
,
I. V. Ivonin
,
M. P. Yakubenya
,
N. K. Maksimova
,
G. K. Arbuzova
Российский физический журнал,
1989,
T. 32, p. 207–211
https://doi.org/10.1007/BF00897386
|
1989 |
Structure and properties of interphase boundaries of gallium arsenide-metal (dielectric)
N. K. Maksimova
,
V. M. Kalygina
,
V. P. Voronkov
,
A. P. Vyatkin
Российский физический журнал,
1993,
T. 36, p. 935–943
https://doi.org/10.1007/BF00559157
|
1993 |
Salient features of the electrical characteristics of oxygen-implanted gallium arsenide Schottky-barrier structures
N. K. Maksimova
,
N. G. Filonov
Российский физический журнал,
1996,
T. 39, p. 419–424
https://doi.org/10.1007/BF02436779
|
1996 |
The effect of water vapor on the electrical properties and sensitivity of thin-film gas sensors based on tin dioxide
V. I. Gaman
,
O. V. Anisimov
,
N. K. Maksimova
,
N. V. Sergeichenko
,
E. Yu. Sevast’yanov
,
E. V. Chernikov
Российский физический журнал,
2008,
T. 51, p. 831–839
https://doi.org/10.1007/s11182-009-9116-8
|
2008 |
The microstructure and properties of thin WO3 films modified by gold
O. V. Anisimov
,
N. K. Maksimova
,
Yu. P. Naiden
,
V. A. Novikov
,
E. Yu. Sevast’yanov
,
F. V. Rudov
,
E. V. Chernikov
Российский журнал физической химии А,
2010,
T. 84, p. 1220–1225
https://doi.org/10.1134/S003602441007023X
|
2010 |
Gas-sensitive properties of thin tin dioxide films under the influence of hydrogen sulfide
E. Yu. Sevast’yanov
,
N. K. Maksimova
,
Е. V. Chernikov
,
А. А. Firsov
Российский физический журнал,
2012,
T. 55, p. 602–608
https://doi.org/10.1007/s11182-012-9855-9
|
2012 |
Influence of Water Vapors and Hydrogen on the Energy Band Bending in the SnO2 Microcrystals of Polycrystalline Tin Dioxide Films
V. I. Gaman
,
А. V. Аlmaev
,
Е. Yu. Sevast’yanov
,
N. K. Maksimova
Российский физический журнал,
2015,
T. 58, p. 179–187
https://doi.org/10.1007/s11182-015-0479-8
|
2015 |
Increase in the Sensitivity and Selectivity of Semiconductor Gas Sensors
T. R. Muksunov
,
N. K. Maksimova
,
E. Yu. Sevast’yanov
,
S. E. Shipilov
,
V. P. Yakubov
Российский физический журнал,
2015,
T. 57, p. 1287–1293
https://doi.org/10.1007/s11182-015-0376-1
|
2015 |
Effect of humidity on the properties of NO2 sensors based on thin WO3 and SnO2 films modified with gold
E. Yu. Sevastyanov
,
N. K. Maksimova
,
F. V. Rudov
,
N. V. Sergeichenko
,
E. V. Chernikov
Российский журнал физической химии А,
2015,
T. 89, p. 447–452
https://doi.org/10.1134/S0036024415030280
|
2015 |
Effect of humidity on the properties of NO2 sensors based on thin WO3 and SnO2 films modified with gold
E. Yu. Sevastyanov
,
N. K. Maksimova
,
F. V. Rudov
,
N. V. Sergeichenko
,
E. V. Chernikov
Российский журнал физической химии А,
2015,
T. 89, p. 447–452
https://doi.org/10.1134/S0036024415030280
|
2015 |
Effect of humidity on the properties of NO2 sensors based on thin WO3 and SnO2 films modified with gold
E. Yu. Sevastyanov
,
N. K. Maksimova
,
F. V. Rudov
,
N. V. Sergeichenko
,
E. V. Chernikov
Российский журнал физической химии А,
2015,
T. 89, p. 447–452
https://doi.org/10.1134/S0036024415030280
|
2015 |
Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide
E. Yu. Sevastianov
,
N. K. Maksimova
,
E. V. Chernikov
,
N. V. Sergeichenko
,
F. V. Rudov
Российский физический журнал,
2016,
T. 59, p. 1198–1205
https://doi.org/10.1007/s11182-016-0891-8
|
2016 |
Properties of Semiconductor Nanocrystalline Sensors of CO and Pyrolysis Products as a Function of Temperature and Duration of Heating and Cooling Cycles
E. Yu. Sevast’yanov
,
N. K. Maksimova
,
A. I. Potekaev
,
E. V. Chernikov
,
N. V. Sergeichenko
Российский физический журнал,
2017,
T. 60, p. 1088–1093
https://doi.org/10.1007/s11182-017-1183-7
|
2017 |
Properties of Resistive Hydrogen Sensors as a Function of Additives of 3D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films
E. Yu. Sevast’yanov
,
N. K. Maksimova
,
A. I. Potekaev
,
N. V. Sergeichenko
,
E. V. Chernikov
,
A. V. Almaev
,
B. O. Kushnarev
Российский физический журнал,
2017,
T. 60, p. 1094–1098
https://doi.org/10.1007/s11182-017-1184-6
|
2017 |
Stability of Characteristics of CO Sensors Based on Tin Dioxide Thin Films in the Thermo-Cyclic Mode
A. I. Potekaev
,
E. Yu. Sevastyanov
,
N. K. Maksimova
,
N. V. Sergeichenko
,
E. V. Chernikov
Российский физический журнал,
2017,
T. 59, p. 2177–2180
https://doi.org/10.1007/s11182-017-1032-8
|
2017 |
Effect of Additives of Pt, Pd, Ag, and Y in Thin Nanocrystalline SnO2 Films on the Characteristics of Resistive Hydrogen Sensors
E. Yu. Sevast’yanov
,
N. K. Maksimova
,
A. I. Potekaev
,
A. V. Almaev
,
E. V. Chernikov
,
N. V. Sergeichenko
,
S. V. Kim
Российский физический журнал,
2018,
T. 61, p. 979–988
https://doi.org/10.1007/s11182-018-1486-3
|
2018 |
Effect of Various Catalysts on the Stability of Characteristics of Acetone Sensors Based on Thin Nanocrystalline SnO2 Films
E. Yu. Sevastyanov
,
N. K. Maksimova
,
A. I. Potekaev
,
L. S. Khludkova
,
E. V. Chernikov
,
T. A. Davydova
Российский физический журнал,
2018,
T. 60, p. 1739–1746
https://doi.org/10.1007/s11182-018-1276-y
|
2018 |