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Публикации
Работа Год
Gold-gallium arsenide surface-barrier junctions
N. K. Maksimova N. K. Maksimova , A. P. Vyatkin A. P. Vyatkin , A. A. Zharov A. A. Zharov
Химия и современные технологии, 1968, T. 11, p. 58–59
https://doi.org/10.1007/BF00816221
1968
Transport mechanism at a metal-gallium arsenide contact
A. P. Vyatkin A. P. Vyatkin , N. K. Maksimova N. K. Maksimova , G. V. Zhivotov G. V. Zhivotov , Yu. A. Zotov Yu. A. Zotov
Российский физический журнал, 1971, T. 14, p. 61–65
https://doi.org/10.1007/BF00819861
1971
Influence of heat treatment on the characteristics of diodes with a schottky barrier
I. D. Romanova I. D. Romanova , N. K. Maksimova N. K. Maksimova , E. N. Pekarskii E. N. Pekarskii , M. P. Yakubenya M. P. Yakubenya
Российский физический журнал, 1976, T. 19, p. 534–536
https://doi.org/10.1007/BF00951998
1976
Surface-barrier structures on AlxGa1−xSb. I. Preparation and physical model of the contact
G. K. Arbuzova G. K. Arbuzova , A. A. Vilisov A. A. Vilisov , V. P. Germogenov V. P. Germogenov , N. K. Maksimova N. K. Maksimova , N. G. Filonov N. G. Filonov
Российский физический журнал, 1979, T. 22, p. 585–589
https://doi.org/10.1007/BF00891547
1979
Surface-barrier structures on AlxGa1−xSb. II. Band gap dependence of barrier height
G. K. Arbuzova G. K. Arbuzova , A. A. Vilisov A. A. Vilisov , V. P. Germogenov V. P. Germogenov , N. K. Maksimova N. K. Maksimova
Российский физический журнал, 1979, T. 22, p. 589–593
https://doi.org/10.1007/BF00891548
1979
Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1−xSb
A. A. Vilisov A. A. Vilisov , V. P. Germogenov V. P. Germogenov , N. K. Maksimova N. K. Maksimova , L. E. Épiktetova L. E. Épiktetova
Российский физический журнал, 1980, T. 23, p. 284–289
https://doi.org/10.1007/BF00893550
1980
Interphase interactions in a Pd-GaAs system and their effect on electrical properties of schottky-barrier structures I. effect of heat treatment on characteristics of GaAs-Pd/Ni contacts
A. P. Vyatkin A. P. Vyatkin , N. K. Maksimova N. K. Maksimova , N. M. Panova N. M. Panova , E. N. Pekarskii E. N. Pekarskii , I. D. Romanova I. D. Romanova , M. P. Yakubenya M. P. Yakubenya
Российский физический журнал, 1981, T. 24, p. 295–298
https://doi.org/10.1007/BF00898256
1981
Phase interactions in the Pd-GaAs system and effects on structures with schottky barriers II. Examination of a gallium arsenide-metal interface by the secondary ion-ion emission method
A. P. Vyatkin A. P. Vyatkin , L. G. Kositsin L. G. Kositsin , N. K. Maksimova N. K. Maksimova , A. M. Misik A. M. Misik , V. P. Yanovskii V. P. Yanovskii
Российский физический журнал, 1981, T. 24, p. 299–301
https://doi.org/10.1007/BF00898257
1981
Defects in Schottky barrier structures
A. P. Vyatkin A. P. Vyatkin , N. K. Maksimova N. K. Maksimova
Российский физический журнал, 1983, T. 26, p. 952–963
https://doi.org/10.1007/BF00896649
1983
Physicochemical interactions in thin film Pb-GaAs structures upon thermal annealing
V. P. Yanovskii V. P. Yanovskii , N. K. Maksimova N. K. Maksimova , G. K. Arbuzova G. K. Arbuzova , V. I. Morozov V. I. Morozov , A. M. Misik A. M. Misik , G. A. Verozubova G. A. Verozubova
Российский физический журнал, 1987, T. 30, p. 730–734
https://doi.org/10.1007/BF00897468
1987
Effect of Ga and As sublayers on the structures and properties of Ni-GaAs contacts
I. D. Romanova I. D. Romanova , N. K. Maksimova N. K. Maksimova , L. Yu. Potakhova L. Yu. Potakhova , V. P. Yanovskii V. P. Yanovskii , M. P. Yakubenya M. P. Yakubenya , O. M. Ivleva O. M. Ivleva , A. M. Misik A. M. Misik , V. S. Morozov V. S. Morozov
Российский физический журнал, 1987, T. 30, p. 131–136
https://doi.org/10.1007/BF00898151
1987
Solid-state recrystallization processes in Ni-GaAs and Pd-GaAs structures
L. M. Krasil'nikova L. M. Krasil'nikova , I. V. Ivonin I. V. Ivonin , M. P. Yakubenya M. P. Yakubenya , N. K. Maksimova N. K. Maksimova , G. K. Arbuzova G. K. Arbuzova
Российский физический журнал, 1989, T. 32, p. 207–211
https://doi.org/10.1007/BF00897386
1989
Structure and properties of interphase boundaries of gallium arsenide-metal (dielectric)
N. K. Maksimova N. K. Maksimova , V. M. Kalygina V. M. Kalygina , V. P. Voronkov V. P. Voronkov , A. P. Vyatkin A. P. Vyatkin
Российский физический журнал, 1993, T. 36, p. 935–943
https://doi.org/10.1007/BF00559157
1993
Salient features of the electrical characteristics of oxygen-implanted gallium arsenide Schottky-barrier structures
N. K. Maksimova N. K. Maksimova , N. G. Filonov N. G. Filonov
Российский физический журнал, 1996, T. 39, p. 419–424
https://doi.org/10.1007/BF02436779
1996
The effect of water vapor on the electrical properties and sensitivity of thin-film gas sensors based on tin dioxide
V. I. Gaman V. I. Gaman , O. V. Anisimov O. V. Anisimov , N. K. Maksimova N. K. Maksimova , N. V. Sergeichenko N. V. Sergeichenko , E. Yu. Sevast’yanov E. Yu. Sevast’yanov , E. V. Chernikov E. V. Chernikov
Российский физический журнал, 2008, T. 51, p. 831–839
https://doi.org/10.1007/s11182-009-9116-8
2008
The microstructure and properties of thin WO3 films modified by gold
O. V. Anisimov O. V. Anisimov , N. K. Maksimova N. K. Maksimova , Yu. P. Naiden Yu. P. Naiden , V. A. Novikov V. A. Novikov , E. Yu. Sevast’yanov E. Yu. Sevast’yanov , F. V. Rudov F. V. Rudov , E. V. Chernikov E. V. Chernikov
Российский журнал физической химии А, 2010, T. 84, p. 1220–1225
https://doi.org/10.1134/S003602441007023X
2010
Gas-sensitive properties of thin tin dioxide films under the influence of hydrogen sulfide
E. Yu. Sevast’yanov E. Yu. Sevast’yanov , N. K. Maksimova N. K. Maksimova , Е. V. Chernikov Е. V. Chernikov , А. А. Firsov А. А. Firsov
Российский физический журнал, 2012, T. 55, p. 602–608
https://doi.org/10.1007/s11182-012-9855-9
2012
Influence of Water Vapors and Hydrogen on the Energy Band Bending in the SnO2 Microcrystals of Polycrystalline Tin Dioxide Films
V. I. Gaman V. I. Gaman , А. V. Аlmaev А. V. Аlmaev , Е. Yu. Sevast’yanov Е. Yu. Sevast’yanov , N. K. Maksimova N. K. Maksimova
Российский физический журнал, 2015, T. 58, p. 179–187
https://doi.org/10.1007/s11182-015-0479-8
2015
Increase in the Sensitivity and Selectivity of Semiconductor Gas Sensors
T. R. Muksunov T. R. Muksunov , N. K. Maksimova N. K. Maksimova , E. Yu. Sevast’yanov E. Yu. Sevast’yanov , S. E. Shipilov S. E. Shipilov , V. P. Yakubov V. P. Yakubov
Российский физический журнал, 2015, T. 57, p. 1287–1293
https://doi.org/10.1007/s11182-015-0376-1
2015
Effect of humidity on the properties of NO2 sensors based on thin WO3 and SnO2 films modified with gold
E. Yu. Sevastyanov E. Yu. Sevastyanov , N. K. Maksimova N. K. Maksimova , F. V. Rudov F. V. Rudov , N. V. Sergeichenko N. V. Sergeichenko , E. V. Chernikov E. V. Chernikov
Российский журнал физической химии А, 2015, T. 89, p. 447–452
https://doi.org/10.1134/S0036024415030280
2015
Effect of humidity on the properties of NO2 sensors based on thin WO3 and SnO2 films modified with gold
E. Yu. Sevastyanov E. Yu. Sevastyanov , N. K. Maksimova N. K. Maksimova , F. V. Rudov F. V. Rudov , N. V. Sergeichenko N. V. Sergeichenko , E. V. Chernikov E. V. Chernikov
Российский журнал физической химии А, 2015, T. 89, p. 447–452
https://doi.org/10.1134/S0036024415030280
2015
Effect of humidity on the properties of NO2 sensors based on thin WO3 and SnO2 films modified with gold
E. Yu. Sevastyanov E. Yu. Sevastyanov , N. K. Maksimova N. K. Maksimova , F. V. Rudov F. V. Rudov , N. V. Sergeichenko N. V. Sergeichenko , E. V. Chernikov E. V. Chernikov
Российский журнал физической химии А, 2015, T. 89, p. 447–452
https://doi.org/10.1134/S0036024415030280
2015
Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide
E. Yu. Sevastianov E. Yu. Sevastianov , N. K. Maksimova N. K. Maksimova , E. V. Chernikov E. V. Chernikov , N. V. Sergeichenko N. V. Sergeichenko , F. V. Rudov F. V. Rudov
Российский физический журнал, 2016, T. 59, p. 1198–1205
https://doi.org/10.1007/s11182-016-0891-8
2016
Properties of Semiconductor Nanocrystalline Sensors of CO and Pyrolysis Products as a Function of Temperature and Duration of Heating and Cooling Cycles
E. Yu. Sevast’yanov E. Yu. Sevast’yanov , N. K. Maksimova N. K. Maksimova , A. I. Potekaev A. I. Potekaev , E. V. Chernikov E. V. Chernikov , N. V. Sergeichenko N. V. Sergeichenko
Российский физический журнал, 2017, T. 60, p. 1088–1093
https://doi.org/10.1007/s11182-017-1183-7
2017
Properties of Resistive Hydrogen Sensors as a Function of Additives of 3D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films
E. Yu. Sevast’yanov E. Yu. Sevast’yanov , N. K. Maksimova N. K. Maksimova , A. I. Potekaev A. I. Potekaev , N. V. Sergeichenko N. V. Sergeichenko , E. V. Chernikov E. V. Chernikov , A. V. Almaev A. V. Almaev , B. O. Kushnarev B. O. Kushnarev
Российский физический журнал, 2017, T. 60, p. 1094–1098
https://doi.org/10.1007/s11182-017-1184-6
2017
Stability of Characteristics of CO Sensors Based on Tin Dioxide Thin Films in the Thermo-Cyclic Mode
A. I. Potekaev A. I. Potekaev , E. Yu. Sevastyanov E. Yu. Sevastyanov , N. K. Maksimova N. K. Maksimova , N. V. Sergeichenko N. V. Sergeichenko , E. V. Chernikov E. V. Chernikov
Российский физический журнал, 2017, T. 59, p. 2177–2180
https://doi.org/10.1007/s11182-017-1032-8
2017
Effect of Additives of Pt, Pd, Ag, and Y in Thin Nanocrystalline SnO2 Films on the Characteristics of Resistive Hydrogen Sensors
E. Yu. Sevast’yanov E. Yu. Sevast’yanov , N. K. Maksimova N. K. Maksimova , A. I. Potekaev A. I. Potekaev , A. V. Almaev A. V. Almaev , E. V. Chernikov E. V. Chernikov , N. V. Sergeichenko N. V. Sergeichenko , S. V. Kim S. V. Kim
Российский физический журнал, 2018, T. 61, p. 979–988
https://doi.org/10.1007/s11182-018-1486-3
2018
Effect of Various Catalysts on the Stability of Characteristics of Acetone Sensors Based on Thin Nanocrystalline SnO2 Films
E. Yu. Sevastyanov E. Yu. Sevastyanov , N. K. Maksimova N. K. Maksimova , A. I. Potekaev A. I. Potekaev , L. S. Khludkova L. S. Khludkova , E. V. Chernikov E. V. Chernikov , T. A. Davydova T. A. Davydova
Российский физический журнал, 2018, T. 60, p. 1739–1746
https://doi.org/10.1007/s11182-018-1276-y
2018
Работа Год